Cargando…
Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by th...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8837061/ https://www.ncbi.nlm.nih.gov/pubmed/35160737 http://dx.doi.org/10.3390/ma15030791 |