P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles

The electric properties and chemical and thermal stability of gallium oxide β-Ga(2)O(3) make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga(2)O(3) still remains a challenge. A β-Ga(2)O(3) epitaxial layer with a h...

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Detalles Bibliográficos
Autores principales: Krawczyk, Maciej, Korbutowicz, Ryszard, Szukiewicz, Rafał, Suchorska-Woźniak, Patrycja, Kuchowicz, Maciej, Teterycz, Helena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838010/
https://www.ncbi.nlm.nih.gov/pubmed/35161678
http://dx.doi.org/10.3390/s22030932

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838010/
https://www.ncbi.nlm.nih.gov/pubmed/35161678
http://dx.doi.org/10.3390/s22030932

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