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P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles

The electric properties and chemical and thermal stability of gallium oxide β-Ga(2)O(3) make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga(2)O(3) still remains a challenge. A β-Ga(2)O(3) epitaxial layer with a h...

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Autores principales: Krawczyk, Maciej, Korbutowicz, Ryszard, Szukiewicz, Rafał, Suchorska-Woźniak, Patrycja, Kuchowicz, Maciej, Teterycz, Helena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838010/
https://www.ncbi.nlm.nih.gov/pubmed/35161678
http://dx.doi.org/10.3390/s22030932
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author Krawczyk, Maciej
Korbutowicz, Ryszard
Szukiewicz, Rafał
Suchorska-Woźniak, Patrycja
Kuchowicz, Maciej
Teterycz, Helena
author_facet Krawczyk, Maciej
Korbutowicz, Ryszard
Szukiewicz, Rafał
Suchorska-Woźniak, Patrycja
Kuchowicz, Maciej
Teterycz, Helena
author_sort Krawczyk, Maciej
collection PubMed
description The electric properties and chemical and thermal stability of gallium oxide β-Ga(2)O(3) make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga(2)O(3) still remains a challenge. A β-Ga(2)O(3) epitaxial layer with a highly developed surface was synthesized on gold electrodes on a Al(2)O(3) substrate via a Halide Vapor Phase Epitaxy (HVPE) method. The epitaxial layer was impregnated with an aqueous colloidal solution of gold nanoparticles with an average diameter of Au nanoparticle less than 5 nm. Electrical impedance of the layer was measured before and after modification with the Au nanoparticles in an ambient atmosphere, in dry nitrogen, and in air containing dimethyl sulfide C(2)H(6)S (DMS). After the impregnation of the β-Ga(2)O(3) epitaxial layer with Au nanoparticles, its conductance increased, and its electric response to air containing DMS had been inversed. The introduction of Au nanoparticles at the surface of the metal oxide was responsible for the formation of an internal depleted region and p-type conductivity at the surface.
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spelling pubmed-88380102022-02-13 P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles Krawczyk, Maciej Korbutowicz, Ryszard Szukiewicz, Rafał Suchorska-Woźniak, Patrycja Kuchowicz, Maciej Teterycz, Helena Sensors (Basel) Article The electric properties and chemical and thermal stability of gallium oxide β-Ga(2)O(3) make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga(2)O(3) still remains a challenge. A β-Ga(2)O(3) epitaxial layer with a highly developed surface was synthesized on gold electrodes on a Al(2)O(3) substrate via a Halide Vapor Phase Epitaxy (HVPE) method. The epitaxial layer was impregnated with an aqueous colloidal solution of gold nanoparticles with an average diameter of Au nanoparticle less than 5 nm. Electrical impedance of the layer was measured before and after modification with the Au nanoparticles in an ambient atmosphere, in dry nitrogen, and in air containing dimethyl sulfide C(2)H(6)S (DMS). After the impregnation of the β-Ga(2)O(3) epitaxial layer with Au nanoparticles, its conductance increased, and its electric response to air containing DMS had been inversed. The introduction of Au nanoparticles at the surface of the metal oxide was responsible for the formation of an internal depleted region and p-type conductivity at the surface. MDPI 2022-01-25 /pmc/articles/PMC8838010/ /pubmed/35161678 http://dx.doi.org/10.3390/s22030932 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Krawczyk, Maciej
Korbutowicz, Ryszard
Szukiewicz, Rafał
Suchorska-Woźniak, Patrycja
Kuchowicz, Maciej
Teterycz, Helena
P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
title P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
title_full P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
title_fullStr P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
title_full_unstemmed P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
title_short P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
title_sort p-type inversion at the surface of β-ga(2)o(3) epitaxial layer modified with au nanoparticles
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838010/
https://www.ncbi.nlm.nih.gov/pubmed/35161678
http://dx.doi.org/10.3390/s22030932
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