Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition

This study examined the microstructural gradation in Sn-doped, n-type Ga(2)O(3) epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga(2)O(3) layer grown using a conventional sing...

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Detalles Bibliográficos
Autores principales: Kim, Kyoung-Ho, Ha, Minh-Tan, Lee, Heesoo, Kim, Minho, Nam, Okhyun, Shin, Yun-Ji, Jeong, Seong-Min, Bae, Si-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838345/
https://www.ncbi.nlm.nih.gov/pubmed/35161000
http://dx.doi.org/10.3390/ma15031050

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838345/
https://www.ncbi.nlm.nih.gov/pubmed/35161000
http://dx.doi.org/10.3390/ma15031050

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