The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga(2)O(3) Metal–Semiconductor Field-Effect Transistors

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga(2)O(3) metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understa...

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Detalles Bibliográficos
Autores principales: Ro, Han-Sol, Kang, Sung Ho, Jung, Sungyeop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838554/
https://www.ncbi.nlm.nih.gov/pubmed/35160858
http://dx.doi.org/10.3390/ma15030913

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838554/
https://www.ncbi.nlm.nih.gov/pubmed/35160858
http://dx.doi.org/10.3390/ma15030913

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