Investigation of the Crystallization Characteristics of Intermediate States in Ge(2)Sb(2)Te(5) Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge(2)Sb(2)Te(5) thin films induced via em...

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Detalles Bibliográficos
Autores principales: Du, Jia, Zhou, Jun, Zhang, Lianzhen, Yang, Na, Ding, Xin, Zhang, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839464/
https://www.ncbi.nlm.nih.gov/pubmed/35159881
http://dx.doi.org/10.3390/nano12030536

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839464/
https://www.ncbi.nlm.nih.gov/pubmed/35159881
http://dx.doi.org/10.3390/nano12030536

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