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Investigation of the Crystallization Characteristics of Intermediate States in Ge(2)Sb(2)Te(5) Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation
Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge(2)Sb(2)Te(5) thin films induced via em...
Autores principales: | Du, Jia, Zhou, Jun, Zhang, Lianzhen, Yang, Na, Ding, Xin, Zhang, Jin |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839464/ https://www.ncbi.nlm.nih.gov/pubmed/35159881 http://dx.doi.org/10.3390/nano12030536 |
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