Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications

This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the d...

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Detalles Bibliográficos
Autores principales: Cheng, Yuang-Tung, Lu, Tsung-Lin, Wang, Shang-Husuan, Ho, Jyh-Jier, Chang, Chung-Cheng, Chou, Chau-Chang, Ho, Jiashow
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839498/
https://www.ncbi.nlm.nih.gov/pubmed/35161989
http://dx.doi.org/10.3390/s22031243

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839498/
https://www.ncbi.nlm.nih.gov/pubmed/35161989
http://dx.doi.org/10.3390/s22031243

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