Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL C...

Descripción completa

Detalles Bibliográficos
Autores principales: Tamersit, Khalil, Kouzou, Abdellah, Bourouba, Hocine, Kennel, Ralph, Abdelrahem, Mohamed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839633/
https://www.ncbi.nlm.nih.gov/pubmed/35159807
http://dx.doi.org/10.3390/nano12030462

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839633/
https://www.ncbi.nlm.nih.gov/pubmed/35159807
http://dx.doi.org/10.3390/nano12030462

Ejemplares similares