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Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL C...

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Detalles Bibliográficos
Autores principales:	Tamersit, Khalil, Kouzou, Abdellah, Bourouba, Hocine, Kennel, Ralph, Abdelrahem, Mohamed
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839633/ https://www.ncbi.nlm.nih.gov/pubmed/35159807 http://dx.doi.org/10.3390/nano12030462

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