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Embedded UV Sensors in CMOS SOI Technology

We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong vi...

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Detalles Bibliográficos
Autores principales: Yampolsky, Michael, Pikhay, Evgeny, Roizin, Yakov
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839690/
https://www.ncbi.nlm.nih.gov/pubmed/35161472
http://dx.doi.org/10.3390/s22030712
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author Yampolsky, Michael
Pikhay, Evgeny
Roizin, Yakov
author_facet Yampolsky, Michael
Pikhay, Evgeny
Roizin, Yakov
author_sort Yampolsky, Michael
collection PubMed
description We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong visible and near-infrared lights, such as UV used for sterilization purposes, e.g., COVID-19 disinfection. Responsivity above 0.1 A/W in the UVC range was achieved, and improved blindness to visible and infrared (IR) light demonstrated by implementing back-end dielectric layers transparent to the UV, in combination with differential sensing circuits with polysilicon UV filters. Degradation of the developed sensors under short wavelength UV was investigated and design and operation regimes allowing decreased degradation were discussed. Compared with other embedded solutions, the current design is implemented in a mass-production CMOS SOI technology, without additional masks, and has high sensitivity in UVC.
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spelling pubmed-88396902022-02-13 Embedded UV Sensors in CMOS SOI Technology Yampolsky, Michael Pikhay, Evgeny Roizin, Yakov Sensors (Basel) Article We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong visible and near-infrared lights, such as UV used for sterilization purposes, e.g., COVID-19 disinfection. Responsivity above 0.1 A/W in the UVC range was achieved, and improved blindness to visible and infrared (IR) light demonstrated by implementing back-end dielectric layers transparent to the UV, in combination with differential sensing circuits with polysilicon UV filters. Degradation of the developed sensors under short wavelength UV was investigated and design and operation regimes allowing decreased degradation were discussed. Compared with other embedded solutions, the current design is implemented in a mass-production CMOS SOI technology, without additional masks, and has high sensitivity in UVC. MDPI 2022-01-18 /pmc/articles/PMC8839690/ /pubmed/35161472 http://dx.doi.org/10.3390/s22030712 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yampolsky, Michael
Pikhay, Evgeny
Roizin, Yakov
Embedded UV Sensors in CMOS SOI Technology
title Embedded UV Sensors in CMOS SOI Technology
title_full Embedded UV Sensors in CMOS SOI Technology
title_fullStr Embedded UV Sensors in CMOS SOI Technology
title_full_unstemmed Embedded UV Sensors in CMOS SOI Technology
title_short Embedded UV Sensors in CMOS SOI Technology
title_sort embedded uv sensors in cmos soi technology
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839690/
https://www.ncbi.nlm.nih.gov/pubmed/35161472
http://dx.doi.org/10.3390/s22030712
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