Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (...

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Detalles Bibliográficos
Autores principales: Wyborski, Paweł, Podemski, Paweł, Wroński, Piotr Andrzej, Jabeen, Fauzia, Höfling, Sven, Sęk, Grzegorz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839711/
https://www.ncbi.nlm.nih.gov/pubmed/35161016
http://dx.doi.org/10.3390/ma15031071

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839711/
https://www.ncbi.nlm.nih.gov/pubmed/35161016
http://dx.doi.org/10.3390/ma15031071

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