Artificial Neurons and Synapses Based on Al/a-SiN(x)O(y):H/P(+)-Si Device with Tunable Resistive Switching from Threshold to Memory

As the building block of brain-inspired computing, resistive switching memory devices have recently attracted great interest due to their biological function to mimic synapses and neurons, which displays the memory switching or threshold switching characteristic. To make it possible for the Si-based...

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Detalles Bibliográficos
Autores principales: Leng, Kangmin, Zhu, Xu, Ma, Zhongyuan, Yu, Xinyue, Xu, Jun, Xu, Ling, Li, Wei, Chen, Kunji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839940/
https://www.ncbi.nlm.nih.gov/pubmed/35159656
http://dx.doi.org/10.3390/nano12030311

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839940/
https://www.ncbi.nlm.nih.gov/pubmed/35159656
http://dx.doi.org/10.3390/nano12030311

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