Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of t...

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Detalles Bibliográficos
Autores principales: Jorudas, Justinas, Prystawko, Paweł, Šimukovič, Artūr, Aleksiejūnas, Ramūnas, Mickevičius, Jūras, Kryśko, Marcin, Michałowski, Paweł Piotr, Kašalynas, Irmantas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840158/
https://www.ncbi.nlm.nih.gov/pubmed/35161062
http://dx.doi.org/10.3390/ma15031118

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840158/
https://www.ncbi.nlm.nih.gov/pubmed/35161062
http://dx.doi.org/10.3390/ma15031118

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