Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with differe...

Descripción completa

Detalles Bibliográficos
Autores principales: Wu, Cheng-Hung, Wang, Kuan-Chi, Wang, Yu-Yun, Hu, Chenming, Su, Chun-Jung, Wu, Tian-Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840286/
https://www.ncbi.nlm.nih.gov/pubmed/35159813
http://dx.doi.org/10.3390/nano12030468

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840286/
https://www.ncbi.nlm.nih.gov/pubmed/35159813
http://dx.doi.org/10.3390/nano12030468

Ejemplares similares