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Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with differe...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840286/ https://www.ncbi.nlm.nih.gov/pubmed/35159813 http://dx.doi.org/10.3390/nano12030468 |
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author | Wu, Cheng-Hung Wang, Kuan-Chi Wang, Yu-Yun Hu, Chenming Su, Chun-Jung Wu, Tian-Li |
author_facet | Wu, Cheng-Hung Wang, Kuan-Chi Wang, Yu-Yun Hu, Chenming Su, Chun-Jung Wu, Tian-Li |
author_sort | Wu, Cheng-Hung |
collection | PubMed |
description | In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices. |
format | Online Article Text |
id | pubmed-8840286 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-88402862022-02-13 Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode Wu, Cheng-Hung Wang, Kuan-Chi Wang, Yu-Yun Hu, Chenming Su, Chun-Jung Wu, Tian-Li Nanomaterials (Basel) Article In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices. MDPI 2022-01-29 /pmc/articles/PMC8840286/ /pubmed/35159813 http://dx.doi.org/10.3390/nano12030468 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wu, Cheng-Hung Wang, Kuan-Chi Wang, Yu-Yun Hu, Chenming Su, Chun-Jung Wu, Tian-Li Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode |
title | Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode |
title_full | Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode |
title_fullStr | Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode |
title_full_unstemmed | Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode |
title_short | Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode |
title_sort | enhancement of ferroelectricity in 5 nm metal-ferroelectric-insulator technologies by using a strained tin electrode |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840286/ https://www.ncbi.nlm.nih.gov/pubmed/35159813 http://dx.doi.org/10.3390/nano12030468 |
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