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Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with differe...

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Autores principales: Wu, Cheng-Hung, Wang, Kuan-Chi, Wang, Yu-Yun, Hu, Chenming, Su, Chun-Jung, Wu, Tian-Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840286/
https://www.ncbi.nlm.nih.gov/pubmed/35159813
http://dx.doi.org/10.3390/nano12030468
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author Wu, Cheng-Hung
Wang, Kuan-Chi
Wang, Yu-Yun
Hu, Chenming
Su, Chun-Jung
Wu, Tian-Li
author_facet Wu, Cheng-Hung
Wang, Kuan-Chi
Wang, Yu-Yun
Hu, Chenming
Su, Chun-Jung
Wu, Tian-Li
author_sort Wu, Cheng-Hung
collection PubMed
description In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.
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spelling pubmed-88402862022-02-13 Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode Wu, Cheng-Hung Wang, Kuan-Chi Wang, Yu-Yun Hu, Chenming Su, Chun-Jung Wu, Tian-Li Nanomaterials (Basel) Article In this work, the ferroelectric characteristic of a 5 nm Hf(0.5)Zr(0.5)O(2) (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices. MDPI 2022-01-29 /pmc/articles/PMC8840286/ /pubmed/35159813 http://dx.doi.org/10.3390/nano12030468 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, Cheng-Hung
Wang, Kuan-Chi
Wang, Yu-Yun
Hu, Chenming
Su, Chun-Jung
Wu, Tian-Li
Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
title Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
title_full Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
title_fullStr Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
title_full_unstemmed Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
title_short Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
title_sort enhancement of ferroelectricity in 5 nm metal-ferroelectric-insulator technologies by using a strained tin electrode
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840286/
https://www.ncbi.nlm.nih.gov/pubmed/35159813
http://dx.doi.org/10.3390/nano12030468
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