Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS(2) Transistors

The encapsulation of single-layer 2D materials within hBN has been shown to improve the mobility of these compounds. Nevertheless, the interplay between the semiconductor channel and the surrounding dielectrics is not yet fully understood, especially their electron–phonon interactions. Therefore, he...

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Detalles Bibliográficos
Autores principales: Fiore, Sara, Klinkert, Cedric, Ducry, Fabian, Backman, Jonathan, Luisier, Mathieu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840300/
https://www.ncbi.nlm.nih.gov/pubmed/35161006
http://dx.doi.org/10.3390/ma15031062

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840300/
https://www.ncbi.nlm.nih.gov/pubmed/35161006
http://dx.doi.org/10.3390/ma15031062

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