Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

From the group-III monochalcogenide (MX, M  =  Ga, In; X  =  S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm...

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Detalles Bibliográficos
Autores principales: Dicorato, Stefano, Gutiérrez, Yael, Giangregorio, Maria M., Palumbo, Fabio, Bianco, Giuseppe V., Losurdo, Maria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840567/
https://www.ncbi.nlm.nih.gov/pubmed/35159811
http://dx.doi.org/10.3390/nano12030465

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840567/
https://www.ncbi.nlm.nih.gov/pubmed/35159811
http://dx.doi.org/10.3390/nano12030465

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