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Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS
From the group-III monochalcogenide (MX, M = Ga, In; X = S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840567/ https://www.ncbi.nlm.nih.gov/pubmed/35159811 http://dx.doi.org/10.3390/nano12030465 |