High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas

In this study, we fabricated three kinds of terahertz detectors with different leakage currents to analyze the plateau-like effect. The results indicate that the platform becomes increasingly apparent with the decrease in the leakage current. The fabricated device with the lowest leakage current sho...

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Detalles Bibliográficos
Autores principales: Huang, Zhen, Yan, Wei, Li, Zhaofeng, Dong, Hui, Yang, Fuhua, Wang, Xiaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840599/
https://www.ncbi.nlm.nih.gov/pubmed/35161680
http://dx.doi.org/10.3390/s22030933

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840599/
https://www.ncbi.nlm.nih.gov/pubmed/35161680
http://dx.doi.org/10.3390/s22030933

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