Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Copper-to-copper (Cu-to-Cu) direct bonding is a promising approach to replace traditional solder joints in three-dimensional integrated circuits (3D ICs) packaging. It has been commonly conducted at a temperature over 300 °C, which is detrimental to integrated electronic devices. In this study, high...

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Detalles Bibliográficos
Autores principales: Lin, Po-Fan, Tran, Dinh-Phuc, Liu, Hung-Che, Li, Yi-Yi, Chen, Chih
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840616/
https://www.ncbi.nlm.nih.gov/pubmed/35160883
http://dx.doi.org/10.3390/ma15030937

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840616/
https://www.ncbi.nlm.nih.gov/pubmed/35160883
http://dx.doi.org/10.3390/ma15030937

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