Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive filament, respectively. The laws of thermodynamics state that these processes correspond to the lowest possible level of free energy. In an RRAM dev...

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Detalles Bibliográficos
Autores principales: Bature, Usman Isyaku, Nawi, Illani Mohd, Khir, Mohd Haris Md, Zahoor, Furqan, Algamili, Abdullah Saleh, Hashwan, Saeed S. Ba, Zakariya, Mohd Azman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840720/
https://www.ncbi.nlm.nih.gov/pubmed/35161148
http://dx.doi.org/10.3390/ma15031205

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840720/
https://www.ncbi.nlm.nih.gov/pubmed/35161148
http://dx.doi.org/10.3390/ma15031205

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