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Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive filament, respectively. The laws of thermodynamics state that these processes correspond to the lowest possible level of free energy. In an RRAM dev...
Autores principales: | Bature, Usman Isyaku, Nawi, Illani Mohd, Khir, Mohd Haris Md, Zahoor, Furqan, Algamili, Abdullah Saleh, Hashwan, Saeed S. Ba, Zakariya, Mohd Azman |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840720/ https://www.ncbi.nlm.nih.gov/pubmed/35161148 http://dx.doi.org/10.3390/ma15031205 |
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