Air processed Cs(2)AgBiBr(6) lead-free double perovskite high-mobility thin-film field-effect transistors

This study focuses on the fabrication and characterization of Cs(2)AgBiBr(6) double perovskite thin film for field-effect transistor (FET) applications. The Cs(2)AgBiBr(6) thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of...

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Detalles Bibliográficos
Autores principales: Abiram, Gnanasampanthan, Gourji, Fatemeh Heidari, Pitchaiya, Selvakumar, Ravirajan, Punniamoorthy, Murugathas, Thanihaichelvan, Velauthapillai, Dhayalan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8844394/
https://www.ncbi.nlm.nih.gov/pubmed/35165320
http://dx.doi.org/10.1038/s41598-022-06319-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8844394/
https://www.ncbi.nlm.nih.gov/pubmed/35165320
http://dx.doi.org/10.1038/s41598-022-06319-z

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