High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure

Metal halide perovskites (MHPs) are plausible candidates for practical p‐type semiconductors. However, in thin film transistor (TFT) applications, both 2D PEA(2)SnI(4) and 3D FASnI(3) MHPs have different drawbacks. In 2D MHP, the TFT mobility is seriously reduced by grain‐boundary issues, whereas 3D...

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Detalles Bibliográficos
Autores principales: Kim, Junghwan, Shiah, Yu‐Shien, Sim, Kihyung, Iimura, Soshi, Abe, Katsumi, Tsuji, Masatake, Sasase, Masato, Hosono, Hideo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8844482/
https://www.ncbi.nlm.nih.gov/pubmed/34927379
http://dx.doi.org/10.1002/advs.202104993

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8844482/
https://www.ncbi.nlm.nih.gov/pubmed/34927379
http://dx.doi.org/10.1002/advs.202104993

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