How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor–Diode Hybrid Integration

Advanced field‐effect transistors (FETs) with nontrivial gates (e.g., offset‐gates, mid‐gates, split‐gates, or multi‐gates) or hybrid integrations (e.g., with diodes, photodetectors, or field‐emitters) have been extensively developed in pursuit for the “More‐than‐Moore” demand. But understanding the...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Chuan, Li, Xiaojie, Luo, Yiyang, Wang, Ya, Hu, Sujuan, Liu, Chenning, Liang, Xiaoci, Zhou, Hang, Chen, Jun, She, Juncong, Deng, Shaozhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8844558/
https://www.ncbi.nlm.nih.gov/pubmed/34914856
http://dx.doi.org/10.1002/advs.202104896

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8844558/
https://www.ncbi.nlm.nih.gov/pubmed/34914856
http://dx.doi.org/10.1002/advs.202104896

Ejemplares similares