Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance

Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN) semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to replace toxic mercury-based ultraviolet lamps. One of the major drawbacks in the utilisation of AlGaN-based UVB LEDs is their...

Descripción completa

Detalles Bibliográficos
Autores principales: Khan, M. Ajmal, Maeda, Noritoshi, Yun, Joosun, Jo, Masafumi, Yamada, Yoichi, Hirayama, Hideki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8850542/
https://www.ncbi.nlm.nih.gov/pubmed/35173171
http://dx.doi.org/10.1038/s41598-022-04876-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8850542/
https://www.ncbi.nlm.nih.gov/pubmed/35173171
http://dx.doi.org/10.1038/s41598-022-04876-x

Ejemplares similares