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Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these dev...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8854405/ https://www.ncbi.nlm.nih.gov/pubmed/35177606 http://dx.doi.org/10.1038/s41467-022-28519-x |