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Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy

Crystallinity of an 80-nm-thick bismuth thin film grown on Si (111) substrate by MBE was investigated. The highly (0003) textured Bi film contains two twinning domains with different bilayer stacking sequences. The basic lattice parameters c and a as well as b, the bilayer thickness, of the two doma...

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Detalles Bibliográficos
Autores principales: Chou, Chieh, Wu, Bo-Xun, Lin, Hao-Hsiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8854617/
https://www.ncbi.nlm.nih.gov/pubmed/35177684
http://dx.doi.org/10.1038/s41598-022-06472-5

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