Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers

Spin orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high performance pure spin current source with a large spin Hall angle a...

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Detalles Bibliográficos
Autores principales: Fan, Tuo, Khang, Nguyen Huynh Duy, Nakano, Soichiro, Hai, Pham Nam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8863830/
https://www.ncbi.nlm.nih.gov/pubmed/35194059
http://dx.doi.org/10.1038/s41598-022-06779-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8863830/
https://www.ncbi.nlm.nih.gov/pubmed/35194059
http://dx.doi.org/10.1038/s41598-022-06779-3

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