High-precision micro-displacement sensor based on tunnel magneto-resistance effect

A high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation...

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Detalles Bibliográficos
Autores principales: Wang, Xuhu, Li, Wang, Jin, Li, Gong, Meimei, Wang, Junqiang, Zhong, Yujie, Ruan, Yi, Guo, Chunhong, Xin, Chenguang, Li, Mengwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8863979/
https://www.ncbi.nlm.nih.gov/pubmed/35194114
http://dx.doi.org/10.1038/s41598-022-06965-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8863979/
https://www.ncbi.nlm.nih.gov/pubmed/35194114
http://dx.doi.org/10.1038/s41598-022-06965-3

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