Cargando…

High-precision micro-displacement sensor based on tunnel magneto-resistance effect

A high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Xuhu, Li, Wang, Jin, Li, Gong, Meimei, Wang, Junqiang, Zhong, Yujie, Ruan, Yi, Guo, Chunhong, Xin, Chenguang, Li, Mengwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8863979/
https://www.ncbi.nlm.nih.gov/pubmed/35194114
http://dx.doi.org/10.1038/s41598-022-06965-3
_version_ 1784655351701831680
author Wang, Xuhu
Li, Wang
Jin, Li
Gong, Meimei
Wang, Junqiang
Zhong, Yujie
Ruan, Yi
Guo, Chunhong
Xin, Chenguang
Li, Mengwei
author_facet Wang, Xuhu
Li, Wang
Jin, Li
Gong, Meimei
Wang, Junqiang
Zhong, Yujie
Ruan, Yi
Guo, Chunhong
Xin, Chenguang
Li, Mengwei
author_sort Wang, Xuhu
collection PubMed
description A high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation technique to enhance the resolution by translating the sine-cosine outputs of a TMR sensor into an output that varies linearly with the displacement. Simultaneously, using the multi-bridge circuit method to suppress external magnetic and geomagnetic interference. Experimental result shows that the micro-displacement sensor has a resolution of 800 nm, accuracy of 0.14[Formula: see text] and a full-scale range of up to millimeter level. This work enables a high-performance displacement sensor, and provides a significant guide for the design of a micro-displacement sensor in practical applications.
format Online
Article
Text
id pubmed-8863979
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-88639792022-02-23 High-precision micro-displacement sensor based on tunnel magneto-resistance effect Wang, Xuhu Li, Wang Jin, Li Gong, Meimei Wang, Junqiang Zhong, Yujie Ruan, Yi Guo, Chunhong Xin, Chenguang Li, Mengwei Sci Rep Article A high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation technique to enhance the resolution by translating the sine-cosine outputs of a TMR sensor into an output that varies linearly with the displacement. Simultaneously, using the multi-bridge circuit method to suppress external magnetic and geomagnetic interference. Experimental result shows that the micro-displacement sensor has a resolution of 800 nm, accuracy of 0.14[Formula: see text] and a full-scale range of up to millimeter level. This work enables a high-performance displacement sensor, and provides a significant guide for the design of a micro-displacement sensor in practical applications. Nature Publishing Group UK 2022-02-22 /pmc/articles/PMC8863979/ /pubmed/35194114 http://dx.doi.org/10.1038/s41598-022-06965-3 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Wang, Xuhu
Li, Wang
Jin, Li
Gong, Meimei
Wang, Junqiang
Zhong, Yujie
Ruan, Yi
Guo, Chunhong
Xin, Chenguang
Li, Mengwei
High-precision micro-displacement sensor based on tunnel magneto-resistance effect
title High-precision micro-displacement sensor based on tunnel magneto-resistance effect
title_full High-precision micro-displacement sensor based on tunnel magneto-resistance effect
title_fullStr High-precision micro-displacement sensor based on tunnel magneto-resistance effect
title_full_unstemmed High-precision micro-displacement sensor based on tunnel magneto-resistance effect
title_short High-precision micro-displacement sensor based on tunnel magneto-resistance effect
title_sort high-precision micro-displacement sensor based on tunnel magneto-resistance effect
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8863979/
https://www.ncbi.nlm.nih.gov/pubmed/35194114
http://dx.doi.org/10.1038/s41598-022-06965-3
work_keys_str_mv AT wangxuhu highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT liwang highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT jinli highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT gongmeimei highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT wangjunqiang highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT zhongyujie highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT ruanyi highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT guochunhong highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT xinchenguang highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect
AT limengwei highprecisionmicrodisplacementsensorbasedontunnelmagnetoresistanceeffect