Vertical oxide thin-film transistor with interfacial oxidation

A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was d...

Descripción completa

Detalles Bibliográficos
Autores principales: Baek, Yeong Jo, Kang, In Hye, Hwang, Sang Ho, Han, Ye Lin, Kang, Min Su, Kang, Seok Jun, Kim, Seo Gwon, Woo, Jae Geun, Yu, Eun Seong, Bae, Byung Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8866528/
https://www.ncbi.nlm.nih.gov/pubmed/35197520
http://dx.doi.org/10.1038/s41598-022-07052-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8866528/
https://www.ncbi.nlm.nih.gov/pubmed/35197520
http://dx.doi.org/10.1038/s41598-022-07052-3

Ejemplares similares