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Vertical oxide thin-film transistor with interfacial oxidation

A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was d...

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Detalles Bibliográficos
Autores principales:	Baek, Yeong Jo, Kang, In Hye, Hwang, Sang Ho, Han, Ye Lin, Kang, Min Su, Kang, Seok Jun, Kim, Seo Gwon, Woo, Jae Geun, Yu, Eun Seong, Bae, Byung Seong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8866528/ https://www.ncbi.nlm.nih.gov/pubmed/35197520 http://dx.doi.org/10.1038/s41598-022-07052-3

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