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Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory
Three-terminal (3-T) thyristor random-access memory is explored for a next-generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate–cathode voltage (V(GC,ST)) and anode–cathode voltage (V(AC,ST)) in the s...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8866617/ https://www.ncbi.nlm.nih.gov/pubmed/35195806 http://dx.doi.org/10.1186/s11671-022-03667-7 |