Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory

Three-terminal (3-T) thyristor random-access memory is explored for a next-generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate–cathode voltage (V(GC,ST)) and anode–cathode voltage (V(AC,ST)) in the s...

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Detalles Bibliográficos
Autores principales: Kim, Hyangwoo, Cho, Hyeonsu, Kwak, Hyeon-Tak, Seo, Myunghae, Lee, Seungho, Kong, Byoung Don, Baek, Chang-Ki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8866617/
https://www.ncbi.nlm.nih.gov/pubmed/35195806
http://dx.doi.org/10.1186/s11671-022-03667-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8866617/
https://www.ncbi.nlm.nih.gov/pubmed/35195806
http://dx.doi.org/10.1186/s11671-022-03667-7

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