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Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives
[Image: see text] The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown. No damag...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8867487/ https://www.ncbi.nlm.nih.gov/pubmed/35224366 http://dx.doi.org/10.1021/acsomega.1c06435 |
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author | Vyacheslavova, Ekaterina A. Morozov, Ivan A. Kudryashov, Dmitri A. Uvarov, Alexander V. Baranov, Artem I. Maksimova, Alina A. Abolmasov, Sergey N. Gudovskikh, Alexander S. |
author_facet | Vyacheslavova, Ekaterina A. Morozov, Ivan A. Kudryashov, Dmitri A. Uvarov, Alexander V. Baranov, Artem I. Maksimova, Alina A. Abolmasov, Sergey N. Gudovskikh, Alexander S. |
author_sort | Vyacheslavova, Ekaterina A. |
collection | PubMed |
description | [Image: see text] The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown. No damage to the Si structure caused by Ar plasma was detected. The introduction of Ar into the plasma also does not affect electrical properties. The lifetime value after cryogenic etching with 5 sccm Ar flow remains at the same level of 0.7 ms. The resulting black silicon has a low total reflectance of 1 ± 0.5% in the range of 450–1000 nm in the overall 100 mm Si wafer surface. |
format | Online Article Text |
id | pubmed-8867487 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-88674872022-02-25 Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives Vyacheslavova, Ekaterina A. Morozov, Ivan A. Kudryashov, Dmitri A. Uvarov, Alexander V. Baranov, Artem I. Maksimova, Alina A. Abolmasov, Sergey N. Gudovskikh, Alexander S. ACS Omega [Image: see text] The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown. No damage to the Si structure caused by Ar plasma was detected. The introduction of Ar into the plasma also does not affect electrical properties. The lifetime value after cryogenic etching with 5 sccm Ar flow remains at the same level of 0.7 ms. The resulting black silicon has a low total reflectance of 1 ± 0.5% in the range of 450–1000 nm in the overall 100 mm Si wafer surface. American Chemical Society 2022-02-08 /pmc/articles/PMC8867487/ /pubmed/35224366 http://dx.doi.org/10.1021/acsomega.1c06435 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Vyacheslavova, Ekaterina A. Morozov, Ivan A. Kudryashov, Dmitri A. Uvarov, Alexander V. Baranov, Artem I. Maksimova, Alina A. Abolmasov, Sergey N. Gudovskikh, Alexander S. Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives |
title | Study of Cryogenic Unmasked Etching of “Black
Silicon” with Ar Gas Additives |
title_full | Study of Cryogenic Unmasked Etching of “Black
Silicon” with Ar Gas Additives |
title_fullStr | Study of Cryogenic Unmasked Etching of “Black
Silicon” with Ar Gas Additives |
title_full_unstemmed | Study of Cryogenic Unmasked Etching of “Black
Silicon” with Ar Gas Additives |
title_short | Study of Cryogenic Unmasked Etching of “Black
Silicon” with Ar Gas Additives |
title_sort | study of cryogenic unmasked etching of “black
silicon” with ar gas additives |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8867487/ https://www.ncbi.nlm.nih.gov/pubmed/35224366 http://dx.doi.org/10.1021/acsomega.1c06435 |
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