Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In(x)Al(1–x)As Stressors

[Image: see text] The indirect nature of silicon (Si) emission currently limits the monolithic integration of photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of Si include band structure engineering via alloying (e.g., Si(x)Ge(1–x–y)Sn(y)) and/or strain engi...

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Detalles Bibliográficos
Autores principales: Clavel, Michael B., Liu, Jheng-Sin, Bodnar, Robert J., Hudait, Mantu K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8867572/
https://www.ncbi.nlm.nih.gov/pubmed/35224355
http://dx.doi.org/10.1021/acsomega.1c06203

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8867572/
https://www.ncbi.nlm.nih.gov/pubmed/35224355
http://dx.doi.org/10.1021/acsomega.1c06203

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