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Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In(x)Al(1–x)As Stressors
[Image: see text] The indirect nature of silicon (Si) emission currently limits the monolithic integration of photonic circuitry with Si electronics. Approaches to circumvent the optical shortcomings of Si include band structure engineering via alloying (e.g., Si(x)Ge(1–x–y)Sn(y)) and/or strain engi...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8867572/ https://www.ncbi.nlm.nih.gov/pubmed/35224355 http://dx.doi.org/10.1021/acsomega.1c06203 |