Cargando…
Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate
[Image: see text] Vertical III–V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approac...
Autores principales: | Lecestre, Aurélie, Martin, Mickael, Cristiano, Filadelfo, Baron, Thierry, Larrieu, Guilhem |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8867577/ https://www.ncbi.nlm.nih.gov/pubmed/35224344 http://dx.doi.org/10.1021/acsomega.1c05876 |
Ejemplares similares
-
Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
por: Guerfi, Youssouf, et al.
Publicado: (2016) -
Fabrication, characterization, and kinetic study of vertical single-crystalline CuO nanowires on Si substrates
por: Cheng, Shao-Liang, et al.
Publicado: (2012) -
InAs-mediated growth of vertical InSb nanowires on Si substrates
por: Li, Tianfeng, et al.
Publicado: (2013) -
High-speed III-V nanowire photodetector monolithically integrated on Si
por: Mauthe, Svenja, et al.
Publicado: (2020) -
A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
por: Zhong, Zhenyang, et al.
Publicado: (2011)