Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection

Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon...

Descripción completa

Detalles Bibliográficos
Autor principal: Wu, Chi-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8869653/
https://www.ncbi.nlm.nih.gov/pubmed/35200375
http://dx.doi.org/10.3390/bios12020115

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8869653/
https://www.ncbi.nlm.nih.gov/pubmed/35200375
http://dx.doi.org/10.3390/bios12020115

Ejemplares similares