Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing

In this study, the efficient fabrication of nickel silicide (NiSi(x)) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor...

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Detalles Bibliográficos
Autores principales: Min, Jin-Gi, Lee, Dong-Hee, Kim, Yeong-Ung, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875420/
https://www.ncbi.nlm.nih.gov/pubmed/35214957
http://dx.doi.org/10.3390/nano12040628

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875420/
https://www.ncbi.nlm.nih.gov/pubmed/35214957
http://dx.doi.org/10.3390/nano12040628

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