GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in medical and material sciences. Existing technologies face problems, such as sensitivity or resilience. Here, we describe a novel class of X-ray sensors based on GaN thin film and GaN/AlGaN high-electro...

Descripción completa

Detalles Bibliográficos
Autores principales: Thalhammer, Stefan, Hörner, Andreas, Küß, Matthias, Eberle, Stephan, Pantle, Florian, Wixforth, Achim, Nagel, Wolfgang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875526/
https://www.ncbi.nlm.nih.gov/pubmed/35208272
http://dx.doi.org/10.3390/mi13020147

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875526/
https://www.ncbi.nlm.nih.gov/pubmed/35208272
http://dx.doi.org/10.3390/mi13020147

Ejemplares similares