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GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in medical and material sciences. Existing technologies face problems, such as sensitivity or resilience. Here, we describe a novel class of X-ray sensors based on GaN thin film and GaN/AlGaN high-electro...

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Detalles Bibliográficos
Autores principales:	Thalhammer, Stefan, Hörner, Andreas, Küß, Matthias, Eberle, Stephan, Pantle, Florian, Wixforth, Achim, Nagel, Wolfgang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875526/ https://www.ncbi.nlm.nih.gov/pubmed/35208272 http://dx.doi.org/10.3390/mi13020147

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