Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (V(TH)) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional...

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Detalles Bibliográficos
Autores principales: Wang, Hongyue, Shi, Yijun, Xin, Yajie, Liu, Chang, Lu, Guoguang, Huang, Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875532/
https://www.ncbi.nlm.nih.gov/pubmed/35208300
http://dx.doi.org/10.3390/mi13020176

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875532/
https://www.ncbi.nlm.nih.gov/pubmed/35208300
http://dx.doi.org/10.3390/mi13020176

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