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Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (V(TH)) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875532/ https://www.ncbi.nlm.nih.gov/pubmed/35208300 http://dx.doi.org/10.3390/mi13020176 |
Sumario: | This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (V(TH)) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and V(TH) stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the V(TH) stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers’ length, thickness, doping density on BV and V(TH) stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs. |
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