Resonant Raman Scattering in Boron-Implanted GaN

A small Boron ion (B-ion) dose of 5 × 10(14) cm(−2) was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak assoc...

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Detalles Bibliográficos
Autores principales: Peng, Yi, Wei, Wenwang, Saleem, Muhammad Farooq, Xiao, Kai, Yang, Yanlian, Yang, Yufei, Wang, Yukun, Sun, Wenhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875807/
https://www.ncbi.nlm.nih.gov/pubmed/35208364
http://dx.doi.org/10.3390/mi13020240

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875807/
https://www.ncbi.nlm.nih.gov/pubmed/35208364
http://dx.doi.org/10.3390/mi13020240

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