On the Near-Pole Hole Insertion Layer and the Far-Pole Hole Insertion Layer for Multi-Quantum-Well Deep Ultraviolet Light-Emitting Diodes

A novel Multi-Quantum-Well Deep Ultra Violet Light Emitting Diode (DUV-LED) device with a near-pole hole insertion layer and far-pole hole insertion layer was proposed and carefully studied. It was found that remarkable enhancements both in the light output power (LOP) and the internal quantum effic...

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Detalles Bibliográficos
Autores principales: Fang, Guanting, Zhang, Min, Xiong, Dayuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875907/
https://www.ncbi.nlm.nih.gov/pubmed/35214958
http://dx.doi.org/10.3390/nano12040629

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8875907/
https://www.ncbi.nlm.nih.gov/pubmed/35214958
http://dx.doi.org/10.3390/nano12040629

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