Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nan...

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Detalles Bibliográficos
Autores principales: Lee, Youngmin, Lee, So Hyun, Son, Hyo Seok, Lee, Sejoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876062/
https://www.ncbi.nlm.nih.gov/pubmed/35214932
http://dx.doi.org/10.3390/nano12040603

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876062/
https://www.ncbi.nlm.nih.gov/pubmed/35214932
http://dx.doi.org/10.3390/nano12040603

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