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Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices
The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nan...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876062/ https://www.ncbi.nlm.nih.gov/pubmed/35214932 http://dx.doi.org/10.3390/nano12040603 |